Potentiality of commercial metamorphic HEMT at cryogenic temperature and low voltage operation - Archive ouverte HAL
Communication Dans Un Congrès Année : 2010

Potentiality of commercial metamorphic HEMT at cryogenic temperature and low voltage operation

Joseph Bellaiche
  • Fonction : Auteur
Derek Smith
  • Fonction : Auteur
Hassan Maher

Résumé

We present in this paper, a study of Dc, RF and Noise characteristics of an industrial metamorphic HEMT (High Electron Mobility Transistor) operating under low voltage at cryogenic temperature. The results at 300K are compared with the obtained results at cryogenic temperature. Temperature decrease makes device characteristics improve. This improvements allow to expect to develop a low power cryogenic electronic (LNA), featuring high frequency/noise performances below 100 mV DC biasing.
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Dates et versions

hal-00549927 , version 1 (23-12-2010)

Identifiants

  • HAL Id : hal-00549927 , version 1

Citer

Albert M.D. Noudeviwa, Yannick Roelens, Francois Danneville, Aurélien Olivier, Nicolas Wichmann, et al.. Potentiality of commercial metamorphic HEMT at cryogenic temperature and low voltage operation. 5th European Microwave Integrated Circuits Conference, EuMIC 2010, Sep 2010, Paris, France. pp.286-289. ⟨hal-00549927⟩
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