Transmission electron microscopy study of erbium silicide formation from Ti/Er stack for Schottky contact applications - Archive ouverte HAL
Article Dans Une Revue Journal of Microscopy Année : 2010

Transmission electron microscopy study of erbium silicide formation from Ti/Er stack for Schottky contact applications

Résumé

In this paper, we present results of transmission electron microscopy studies on erbium silicide structures fabricated under various thermal conditions. A titanium cap has been used as a protective layer against oxidation during rapid thermal annealing of an erbium layer in a temperature range of 300–700°C. Both layers (200 nm Ti and 25 nm Er) were deposited by electron-beam sputtering. The investigations have shown that the transformation of the 25-nm-thick erbium into erbium silicide is completed after annealing at 500°C. At higher temperatures, the formation of a titanium silicide layer above erbium silicide is observed. The lowest Schottky barrier has been measured in the sample annealed at 700°C.
Fichier principal
Vignette du fichier
2010-J-Microscopy-TEM-erbium-silicide-hal.pdf (400.3 Ko) Télécharger le fichier
Origine Fichiers produits par l'(les) auteur(s)

Dates et versions

hal-00549623 , version 1 (18-09-2024)

Identifiants

Citer

J. Ratajczak, A. Laszcz, A. Czerwinski, J. Katcki, F. Phillipp, et al.. Transmission electron microscopy study of erbium silicide formation from Ti/Er stack for Schottky contact applications. Journal of Microscopy, 2010, EM 2008 ‐ XIII International Conference on Electron Microscopy, 237 (3), pp.379-383. ⟨10.1111/j.1365-2818.2009.03264.x⟩. ⟨hal-00549623⟩
27 Consultations
0 Téléchargements

Altmetric

Partager

More