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Article Dans Une Revue physica status solidi (a) Année : 2010

Graphene growth by molecular beam epitaxy using a solid carbon source

E. Moreau
F.J. Ferrer
  • Fonction : Auteur
D. Vignaud
S. Godey

Résumé

The direct elaboration of graphene by molecular beam epitaxy (MBE) has been studied, using a solid carbon source. Successful growth has been achieved on both the carbon and silicon terminated faces of silicon carbide substrates in the temperature range 1000-1100 °C, as confirmed by low energy electron diffraction (LEED) and X-ray photoemission spectroscopy (XPS) analysis. Atomic force microscopy (AFM) observations show that the initial substrate structure, i.e. flat atomic terraces and half-period high steps, remains almost unaffected during the growth, contrary to what is observed following the graphitization process.

Dates et versions

hal-00549551 , version 1 (22-12-2010)

Identifiants

Citer

E. Moreau, F.J. Ferrer, D. Vignaud, S. Godey, X. Wallart. Graphene growth by molecular beam epitaxy using a solid carbon source. physica status solidi (a), 2010, 207, pp.300-303. ⟨10.1002/pssa.200982412⟩. ⟨hal-00549551⟩
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