AlGaN/GaN HEMTs on (001) silicon substrate with power density performance of 2.9 W/mm at 10 GHz - Archive ouverte HAL Access content directly
Journal Articles IEEE Transactions on Electron Devices Year : 2010

AlGaN/GaN HEMTs on (001) silicon substrate with power density performance of 2.9 W/mm at 10 GHz

J.C. Gerbedoen
A. Soltani
S. Joblot
  • Function : Author
Christophe Gaquière
Y. Cordier
F. Semond
  • Function : Author
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hal-00549455 , version 1 (22-12-2010)

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J.C. Gerbedoen, A. Soltani, S. Joblot, Jean-Claude de Jaeger, Christophe Gaquière, et al.. AlGaN/GaN HEMTs on (001) silicon substrate with power density performance of 2.9 W/mm at 10 GHz. IEEE Transactions on Electron Devices, 2010, 57, pp.1497-1503. ⟨10.1109/TED.2010.2048792⟩. ⟨hal-00549455⟩
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