AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Journal of Applied Physics Année : 2010

AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources

Résumé

We report on room temperature terahertz generation by a submicron size AlGaN/GaN-based high electron mobility transistors. The emission peak is found to be tunable by the gate voltage between 0.75 and 2.1 THz. Radiation frequencies correspond to the lowest fundamental plasma mode in the gated region of the transistor channel. Emission appears at a certain drain bias in a thresholdlike manner. Observed emission is interpreted as a result of Dyakonov–Shur plasma wave instability in the gated two-dimensional electron gas.

Domaines

Electronique
Fichier principal
Vignette du fichier
El Fatimy_2010_1.3291101.pdf (613.87 Ko) Télécharger le fichier
Origine : Fichiers éditeurs autorisés sur une archive ouverte

Dates et versions

hal-00549452 , version 1 (25-05-2022)

Identifiants

Citer

A. El Fatimy, N. Dyakonova, Y. Meziani, T. Otsuji, W. Knap, et al.. AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources. Journal of Applied Physics, 2010, 107 (2), pp.024504. ⟨10.1063/1.3291101⟩. ⟨hal-00549452⟩
27 Consultations
45 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More