DC performance of high-quantum-efficiency 1.3µm GaNAsSb/GaAs waveguide photodetector - Archive ouverte HAL Access content directly
Journal Articles IEEE Electron Device Letters Year : 2010

DC performance of high-quantum-efficiency 1.3µm GaNAsSb/GaAs waveguide photodetector

Z. Xu
  • Function : Author
N. Saadsaoud
  • Function : Author
Malek Zegaoui
Wan Khai Loke
  • Function : Author
Kianhuan Tan
  • Function : Author
S. Wicaksono
  • Function : Author
Soon Fatt Yoon
  • Function : Author
Christiane Legrand
  • Function : Author
Jean Chazelas
  • Function : Author

Abstract

We present the dc performance of a high-quantum-efficiency GaNAsSb/GaAs p-i-n waveguide photodetector. GaNAsSb with N and Sb contents of 3.3% and 8%, respectively, is sandwiched by AlGaAs/GaAs cladding layers. Two types of device epilayer structures, i.e., with and without AlGaAs cladding layer, show high responsivity values of 0.72 and 0.55 A/W, respectively, at a reverse bias voltage of 10 V and a wavelength of 1.3 $\mu\hbox{m}$. These correspond to internal quantum efficiencies of 96.7% and 73.9%, respectively. A linear increase in photocurrent with an increase in optical power up to 8 mW and also a high reverse breakdown voltage of $-$16.6 V were obtained.
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Dates and versions

hal-00549004 , version 1 (21-12-2010)

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Z. Xu, N. Saadsaoud, Malek Zegaoui, Wan Khai Loke, Kianhuan Tan, et al.. DC performance of high-quantum-efficiency 1.3µm GaNAsSb/GaAs waveguide photodetector. IEEE Electron Device Letters, 2010, 31 (5), pp.449-451. ⟨10.1109/LED.2010.2041742⟩. ⟨hal-00549004⟩
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