High-speed programming of nanowire-gated carbon-nanotube memory devices

G. Agnus; A. Filoramo; S. Lenfant; D. Vuillaume; J.P. Bourgoin; Vincent Derycke

doi:10.1002/smll.201001293

Journal Articles Small Year : 2010

High-speed programming of nanowire-gated carbon-nanotube memory devices

, , , (1) , ,

1

G. Agnus

Function : Author

A. Filoramo

Function : Author

S. Lenfant

Function : Author
PersonId : 738520
IdHAL : stephane-lenfant
ORCID : 0000-0002-6857-8752
IdRef : 059841265

CV

D. Vuillaume

Function : Author

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520

J.P. Bourgoin

Function : Author

Vincent Derycke

Function : Author
PersonId : 782234
ORCID : 0000-0002-3272-9694
IdRef : 130987271

Collection IEMN : Connect in order to contact the contributor

https://hal.science/hal-00548969

Submitted on : Tuesday, December 21, 2010-8:59:36 AM

Last modification on : Wednesday, January 24, 2024-9:54:18 AM

Dates and versions

hal-00548969 , version 1 (21-12-2010)

Identifiers

HAL Id : hal-00548969 , version 1
DOI : 10.1002/smll.201001293

Cite

G. Agnus, A. Filoramo, S. Lenfant, D. Vuillaume, J.P. Bourgoin, et al.. High-speed programming of nanowire-gated carbon-nanotube memory devices. Small, 2010, 6, pp.2659-2663. ⟨10.1002/smll.201001293⟩. ⟨hal-00548969⟩

Export

BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite

Collections

CNRS UNIV-VALENCIENNES IEMN UNIV-LILLE

26 View

0 Download

High-speed programming of nanowire-gated carbon-nanotube memory devices

Dates and versions

Identifiers

Cite

Export

Collections

Altmetric

Share