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Article Dans Une Revue Japanese Journal of Applied Physics, part 2 : Letters Année : 2010

Picosecond carrier lifetime in low-temperature-grown GaAsSb

Résumé

We study the influence of growth parameters on the properties of low-temperature-grown GaAsSb layers with 15–20% Sb. We demonstrate that a proper choice of growth conditions allows achieving monocrystalline as-grown layers exhibiting carrier lifetime around 1 ps and a resistivity higher than 1 kΩ·cm. Upon 600 °C annealing, the resistivity strongly decreases, indicating differences with previous observations, which we try to elucidate. The as-grown material properties are promising for THz generation and detection using a wavelength of around 1.05 µm

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hal-00548732 , version 1 (20-12-2010)

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X. Wallart, Christophe Coinon, S.R. Plissard, S. Godey, Olivier Offranc, et al.. Picosecond carrier lifetime in low-temperature-grown GaAsSb. Japanese Journal of Applied Physics, part 2 : Letters, 2010, 3, pp.111202-1-3. ⟨10.1143/APEX.3.111202⟩. ⟨hal-00548732⟩
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