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Article Dans Une Revue Applied Physics Letters Année : 2010

Graphene growth by molecular beam epitaxy on the carbon-face of SiC

Résumé

Graphene layers have been grown by molecular beam epitaxy (MBE) on the (0001¯) C-face of SiC and have been characterized by atomic force microscopy, low energy electron diffraction (LEED), and UV photoelectron spectroscopy. Contrary to the graphitization process, the step-terrace structure of SiC is fully preserved during the MBE growth. LEED patterns show multiple orientation domains which are characteristic of graphene on SiC (0001¯), indicating non-Bernal rotated graphene planes. Well-defined Dirac cones, typical of single-layer graphene, have been observed in the valence band for few graphene layers by synchrotron spectroscopy, confirming the electronic decoupling of graphene layers.
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hal-00548720 , version 1 (27-05-2022)

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E. Moreau, S. Godey, F.J. Ferrer, D. Vignaud, X. Wallart, et al.. Graphene growth by molecular beam epitaxy on the carbon-face of SiC. Applied Physics Letters, 2010, 97 (24), pp.241907. ⟨10.1063/1.3526720⟩. ⟨hal-00548720⟩
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