Valence-band physics and the optical properties of GaN epilayers grown onto sapphire with wurtzite symmetry - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Physical Review B: Condensed Matter and Materials Physics (1998-2015) Année : 1995

Valence-band physics and the optical properties of GaN epilayers grown onto sapphire with wurtzite symmetry

Bernard Gil
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Olivier Briot
Roger Aulombard
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Résumé

We report on a quantitative analysis of the band gap of hexagonal GaN epilayers in terms of the joint contributions;of the actual wurtzite symmetry on the one hand and of residual strain fields on the other hand. This investigation leads to revision of the previous modelings based on quasicubic descriptions of the valence-band physics and gives Delta(1)=10+/-0.1 meV, Delta(2)=6.2+/-0.1 meV, and Delta(3)=5.5+/-0.1 meV. Last we propose a set of deformation potentials for the hexagonal GaN semiconductor.
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hal-00547098 , version 1 (15-12-2010)

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  • HAL Id : hal-00547098 , version 1

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Bernard Gil, Olivier Briot, Roger Aulombard. Valence-band physics and the optical properties of GaN epilayers grown onto sapphire with wurtzite symmetry. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1995, 52 (24), pp.17028. ⟨hal-00547098⟩
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