Article Dans Une Revue Journal of Crystal Growth Année : 2010

Incorporation of group III, IV and V elements in 3C–SiC(1 1 1) layers grown by the vapour–liquid–solid mechanism

Maya Marinova
  • Fonction : Auteur
  • PersonId : 1127621
Hervé Peyre
Jean Camassel
  • Fonction : Auteur
  • PersonId : 839246
  • IdRef : 069193568

Résumé

We report on a comparative investigation of the incorporation of group III, IV and V impurities in 3C–SiC heteroepitaxial layers grown by the vapour–liquid–solid (VLS) mechanism on on-axis a-SiC substrates. To this end, various Si-based melts have been used with addition of Al, Ga, Ge and Sn species. Homoepitaxial a-SiC layers grown using Al-based melts were used for comparison purposed for Al incorporation. Nitrogen incorporation depth profile systematically displays an overshoot at the substrate/epilayer interface for all the layers. Ga and Al incorporations follow the same distribution shape as N whereas this is not the case for the isoelectronic impurities Ge and Sn. This suggests some interaction between Ga/Al and N coming from the high bonding energy between the group III and V elements, which does not exist with Ge and Sn. This is why both incorporate as a cluster. A model of incorporation is proposed taking into account metal-N and metal-C bonding energies together with the solid solubility of the corresponding nitrides.

Dates et versions

hal-00547051 , version 1 (15-12-2010)

Identifiants

Citer

Jean Lorenzzi, Georgios Zoulis, Jianwu Sun, Maya Marinova, Olivier Kim-Hak, et al.. Incorporation of group III, IV and V elements in 3C–SiC(1 1 1) layers grown by the vapour–liquid–solid mechanism. Journal of Crystal Growth, 2010, 312 (23), pp.3443-3450. ⟨10.1016/j.jcrysgro.2010.08.058⟩. ⟨hal-00547051⟩
153 Consultations
0 Téléchargements

Altmetric

Partager

  • More