Polarized Photoluminescence From Nonpolar (11-20) (Ga,In)N Multi-Quantum-Wells - Archive ouverte HAL Access content directly
Conference Papers Year : 2010

Polarized Photoluminescence From Nonpolar (11-20) (Ga,In)N Multi-Quantum-Wells


Nonpolar (11-20) (Ga,In)N multi-quantum wells have been studied by polarized, temperature dependent photoluminescence (PL). A non monotonic temperature dependence of the difference in PL peak energies recorded for E parallel to c or E perpendicular to c, and of the polarization ratio is observed. We interpret these effects by first an orthorhombic distortion of the crystal and an increased electron-hole exchange energy relative to GaN. This increase is in agreement with calculations on the effect of confinement on the exciton exchange splitting.

Dates and versions

hal-00546363 , version 1 (14-12-2010)



T. Gühne, Z. Bougrioua, M. Nemoz, R. Chmielowski, Thierry Bretagnon, et al.. Polarized Photoluminescence From Nonpolar (11-20) (Ga,In)N Multi-Quantum-Wells. PHYSICS OF SEMICONDUCTORS: 29th International Conference on the Physics of Semiconductors, Jul 2008, Rio de Janeiro, Brazil. pp.191-192, ⟨10.1063/1.3295362⟩. ⟨hal-00546363⟩
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