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Communication Dans Un Congrès Année : 2009

Terahertz imaging using high electron mobility transistors as plasma wave detectors

Résumé

Two experiments demonstrate that high electron mobility transistors (HEMTs) are well suited for terahertz (THz) imaging. We have shown that HEMTs can be effectively used as plasma wave detectors in a THz imaging system at frequencies higher than 1 THz at room temperature and this device are sensitive to the polarization direction of THz radiation.

Dates et versions

hal-00545979 , version 1 (13-12-2010)

Identifiants

Citer

S. Nadar, D. Coquillat, M. Sakowicz, H. Videlier, F. Teppe, et al.. Terahertz imaging using high electron mobility transistors as plasma wave detectors. 15th International Semiconducting and Insulating Materials Conference (SIMC-XV) Vilnius Univ, Vilnius, LITHUANIA, Jun 2009, Lithuania. pp.2855-2857, ⟨10.1002/PSSC.200982532⟩. ⟨hal-00545979⟩
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