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Communication Dans Un Congrès Année : 2002

4H-SiC material for Hall effect and high-temperature sensors working in harsh environments

Jean-Louis Robert
  • Fonction : Auteur
  • PersonId : 884414
Sylvie Contreras
Jean Camassel
  • Fonction : Auteur
  • PersonId : 839246
J. Pernot
  • Fonction : Auteur
Sandrine Juillaguet
  • Fonction : Auteur
  • PersonId : 839245
L. Di Cioccio
  • Fonction : Auteur
T. Billon
  • Fonction : Auteur

Résumé

We report electrical and optical measurements performed on low-doped, n-type 4H-SiC. We show that below a typical carrier concentration of similar to5 10(15) cm(-3) at room temperature, they work in the so-called exhaustion regime from 300 K. The carrier concentration remains constant and the resistivity increases linearly at a rate of 3400 ppm/K from 500 to 800 K. This establishes low doped SiC as a good candidate to produce high performance Hall sensors, working in harsh environment, with a large sensitivity and a low thermal drift.
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Dates et versions

hal-00543769 , version 1 (06-12-2010)

Identifiants

  • HAL Id : hal-00543769 , version 1

Citer

Jean-Louis Robert, Sylvie Contreras, Jean Camassel, J. Pernot, Sandrine Juillaguet, et al.. 4H-SiC material for Hall effect and high-temperature sensors working in harsh environments. International Conference on Silicon Carbide and Related Materials, Oct 2001, TSUKUBA (JAPAN), France. pp.1435-1438. ⟨hal-00543769⟩
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