Combined structural and optical studies of stacking faults in 4H-SiC layers grown by chemical vapour deposition - Archive ouverte HAL Access content directly
Conference Papers Year : 2009

Combined structural and optical studies of stacking faults in 4H-SiC layers grown by chemical vapour deposition

Maya Marinova
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  • PersonId : 1127621
Teddy Robert
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  • PersonId : 860822
Sandrine Juillaguet
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  • PersonId : 839245
Ioannis Tsiaoussis
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Nikolaos Frangis
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Efstathios Polychroniadis
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Jean Camassel
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  • PersonId : 839246
Thierry Chassagne
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Abstract

The formation of in-grown stacking faults (SFs) in chemical vapour deposition (CVD) grown 4H-SiC epilayer has been studied by high-resolution transmission electron microscopy (HRTEM) and low-temperature photoluminescence (LTPL). Local inhomogeneities in the SF density have been found, where different SF arrangements appear. They range from pure 8H-SiC unit cells to a few distinguished sequences, forming in some cases long-range semi-periodic incommensurate structures. Despite such large dispersion, the same optical (LTPL) signature is always found. This is discussed in the light of coupled quantum well models.;[GRAPHICS];HRTEM image showing the formation of an extended defect (16 bilayers thick) in a CVD grown 4H-SiC epitaxial layer. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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Dates and versions

hal-00543707 , version 1 (06-12-2010)

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  • HAL Id : hal-00543707 , version 1

Cite

Maya Marinova, Teddy Robert, Sandrine Juillaguet, Ioannis Tsiaoussis, Nikolaos Frangis, et al.. Combined structural and optical studies of stacking faults in 4H-SiC layers grown by chemical vapour deposition. 9th Biennial Conference on High Resolution X-Ray Diffraction and Imaging, Sep 2008, Linz (AUSTRIA), France. pp.1924-1930. ⟨hal-00543707⟩
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