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Article Dans Une Revue Physical Review B: Condensed Matter and Materials Physics (1998-2015) Année : 2010

Probing the electrical anisotropy of multilayer graphene on the Si face of 6H-SiC

Benoit Jouault
B. Jabakhanji
  • Fonction : Auteur
Nicolas Camara
Wilfried Desrat
Antoine Tiberj
Jean-Roch Huntzinger
Christophe Consejo
  • Fonction : Auteur
  • PersonId : 860504
A. Caboni
  • Fonction : Auteur
P. Godignon
  • Fonction : Auteur
Y. Kopelevich
  • Fonction : Auteur
Jean Camassel
  • Fonction : Auteur
  • PersonId : 839246

Résumé

We studied the in-plane magnetoresistance R(B, T) anisotropy in epitaxial multilayer graphene films grown on the Si face of a 6H-SiC substrate that originates from steplike morphology of the SiC substrate. To enhance the anisotropy, a combination of argon atmosphere with graphite capping was used during the film growth. The obtained micro-Raman spectra demonstrated a complex multilayer graphene structure with the smaller film thickness on terraces as compared to the step edges. Several Hall bars with different current/steps mutual orientations have been measured. A clear anisotropy in the magnetoresistance has been observed, and attributed to variations in electron mobility governed by the steplike structure. Our data also revealed that (i) the graphene-layer stacking is mostly Bernal type, (ii) the carriers are massive, and (iii) the carriers are confined to the first 2-4 graphene layers following the buffer layer.
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Dates et versions

hal-00543285 , version 1 (06-12-2010)

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Citer

Benoit Jouault, B. Jabakhanji, Nicolas Camara, Wilfried Desrat, Antoine Tiberj, et al.. Probing the electrical anisotropy of multilayer graphene on the Si face of 6H-SiC. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2010, 82, pp.085438. ⟨10.1103/PhysRevB.82.085438⟩. ⟨hal-00543285⟩
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