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Article Dans Une Revue Applied Physics Letters Année : 2010

Growth of monolayer graphene on 8 degrees off-axis 4H-SiC (000-1) substrates with application to quantum transport devices

Nicolas Camara
A. Caboni
  • Fonction : Auteur
B. Jabakhanji
  • Fonction : Auteur
Wilfried Desrat
E. Pausas
  • Fonction : Auteur
Christophe Consejo
  • Fonction : Auteur
  • PersonId : 860504
N. Mestres
  • Fonction : Auteur
P. Godignon
  • Fonction : Auteur
Jean Camassel
  • Fonction : Auteur
  • PersonId : 839246

Résumé

Using high temperature annealing conditions with a graphite cap covering the C-face of an 8 off-axis 4H-SiC sample, large and homogeneous single epitaxial graphene layers have been grown. Raman spectroscopy shows evidence of the almost free-standing character of these monolayer graphene sheets, which was confirmed by magnetotransport measurements. We find a moderate p-type doping, high carrier mobility, and half integer quantum Hall effect typical of high quality graphene samples. This opens the way to a fully compatible integration of graphene with SiC devices on the wafers that constitute the standard in today's SiC industry. (C) 2010 American Institute of Physics. [doi:10.1063/1.3480610]

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Dates et versions

hal-00543281 , version 1 (06-12-2010)

Identifiants

Citer

Nicolas Camara, Benoit Jouault, A. Caboni, B. Jabakhanji, Wilfried Desrat, et al.. Growth of monolayer graphene on 8 degrees off-axis 4H-SiC (000-1) substrates with application to quantum transport devices. Applied Physics Letters, 2010, 97, pp.093107. ⟨10.1063/1.3480610⟩. ⟨hal-00543281⟩
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