Enhanced thermopower under time-dependent gate voltage - Archive ouverte HAL
Article Dans Une Revue Physical Review B: Condensed Matter and Materials Physics (1998-2015) Année : 2011

Enhanced thermopower under time-dependent gate voltage

Résumé

We derive formal expressions of time-dependent energy and heat currents through a nanoscopic device using the Keldysh nonequilibrium Green function technique. Numerical results are reported for a metal/dot/metal junction where the dot level energy is abruptly changed by a step-shaped voltage pulse. Analytical linear responses are obtained for the time-dependent thermoelectric coefficients. We show that the Seebeck coefficient can be enhanced in the transient regime up to an amount (here rising 40%) controlled by both the dot energy and the height of the voltage step.
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Dates et versions

hal-00541916 , version 1 (01-12-2010)

Identifiants

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Adeline Crépieux, Fedor Simkovic, Benjamin Cambon, Fabienne Michelini. Enhanced thermopower under time-dependent gate voltage. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 83 (15), pp.153417. ⟨10.1103/PhysRevB.83.153417⟩. ⟨hal-00541916⟩
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