Characterization of bulk (111) 3C-SiC single crystals grown on 4H-SiC by the CF-PVT method - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2006

Characterization of bulk (111) 3C-SiC single crystals grown on 4H-SiC by the CF-PVT method

L. Latu-Romain
D. Chaussende
Carole Balloud
  • Fonction : Auteur
Sandrine Juillaguet
  • Fonction : Auteur
  • PersonId : 839245
L. Rapenne
Etienne Pernot
  • Fonction : Auteur
Jean Camassel
  • Fonction : Auteur
  • PersonId : 839246
M. Pons
Roland Madar
  • Fonction : Auteur

Résumé

Because of the formation of DPB (Double Positioning Boundary) when starting from a hexagonal < 0001 > seed, DPB-free 3C-SiC single crystals have never been reported up to now. In a recent work we showed that, using adapted nucleation conditions, one could grow thick 3C-SiC single crystal almost free of DPB [1]. In this work we present the results of a multi-scale investigation of such crystals. Using bireffingence microscopy, EBSD and HR-TEM, we find evidence of a continuous improvement of the crystal quality with increasing thickness in the most defected area, at the sample periphery. On the contrary, in the large DPB-free area, the SF density remains rather constant from the interface to the surface. The LTPL spectra collected at 5K on the upper part of samples present a nice resolution of multiple bound exciton features (up to m=5) which clearly shows the high (electronic) quality of our 3C-SiC material.
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hal-00541637 , version 1 (19-04-2020)

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L. Latu-Romain, D. Chaussende, Carole Balloud, Sandrine Juillaguet, L. Rapenne, et al.. Characterization of bulk (111) 3C-SiC single crystals grown on 4H-SiC by the CF-PVT method. International Conference on Silicon Carbide and Related Materials (ICSCRM 2005), Sep 2005, Pittsburgh, United States. pp.99-102, ⟨10.4028/www.scientific.net/MSF.527-529.99⟩. ⟨hal-00541637⟩
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