Electric-field screening effects in the micro-photolurninescence spectra of as-grown stacking faults in 4H-SiC - Archive ouverte HAL Access content directly
Conference Papers Year : 2007

Electric-field screening effects in the micro-photolurninescence spectra of as-grown stacking faults in 4H-SiC

Sandrine Juillaguet
  • Function : Author
  • PersonId : 839245
Thierry Guillet
Richard Bardoux
  • Function : Author
  • PersonId : 884048
Jean Camassel
  • Function : Author
  • PersonId : 839246
T. Chassagne
  • Function : Author

Abstract

We report a comparison of continuous-wave photo luminescence spectra with spatially-resolved micro-photoluminescence data collected at low temperature on as-grown stacking faults in a 4H-SiC epitaxial layer. We find that the defects have a large triangular shape (50 mu m x 50 mu m x 50 mu m) and that the maximum signal wavelength shifts when scanning across one triangular defect. These results show that the built-in electric field in the stacking fault well can be screened, more or less depending on the incoming light intensity.
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Dates and versions

hal-00541635 , version 1 (30-11-2010)

Identifiers

  • HAL Id : hal-00541635 , version 1

Cite

Sandrine Juillaguet, Thierry Guillet, Richard Bardoux, Jean Camassel, T. Chassagne. Electric-field screening effects in the micro-photolurninescence spectra of as-grown stacking faults in 4H-SiC. 6th European Conference on Silicon Carbide and Related Materials, Sep 2006, Newcastle upon Tyne (ENGLAND), France. pp.351-354. ⟨hal-00541635⟩
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