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Journal Articles Applied Physics Letters Year : 2007

Screening the built-in electric field in 4H silicon carbide stacking faults

Sandrine Juillaguet
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  • PersonId : 839245
Jean Camassel
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  • PersonId : 839246
M. Albrecht
  • Function : Author
T. Chassagne
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Abstract

The authors report a detailed comparison of low temperature photoluminescence (LTPL) and cathodo luminescence (LTCL) spectra collected in the same stacking faults rich area of a 4H silicon carbide epitaxial layer. In both cases, they find that the maximum wavelength of the defect-related emission lines shifts when the excitation spot position moves across the defect zone. The shift is excitation-intensity dependent. It is very small for LTPL (4 meV) but reach 20 meV for LTCL. This constitutes the first experimental evidence that a screening of the quantum confined Stark effect can be achieved in 4H-SiC SF quantum wells. (c) 2007 American Institute of Physics.
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hal-00541628 , version 1 (30-11-2010)

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Sandrine Juillaguet, Jean Camassel, M. Albrecht, T. Chassagne. Screening the built-in electric field in 4H silicon carbide stacking faults. Applied Physics Letters, 2007, 90, pp.111902. ⟨10.1063/1.2713169⟩. ⟨hal-00541628⟩
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