Tunneling and Coulomb Blockade in narrow GaAs/InGaAs/AlGaAs Hall bars in the quantum hall regime - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2007

Tunneling and Coulomb Blockade in narrow GaAs/InGaAs/AlGaAs Hall bars in the quantum hall regime

Benoit Jouault
Christophe Chaubet
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D. Mailly

Résumé

We present a low temperature magnetoconductance study of a submicron hall bar made from an AlGaAs/InGaAs/GaAs heterostructure. Experiments were performed at very low temperature (120 mK), with a magnetic field ranging from OT to 13.5 T. In the presence of a quantizing magnetic field, at the transition between two quantized Hall plateaus, a succession of sharp peaks is detected in the Hall signal RH and in the longitudinal resistance R-L. The peaks appearing on the high-v side of the R-L transition appear to be different from the peaks appearing on the low-v side. They mainly differ by their temperature dependence. On the high-v side of the RL transition, the temperature evolution of the peaks is typical for resonant tunneling through a single state in one of the antidots that are progressively formed when the initially occupied LL is emptied. On the low v of the transition, by contrast, the temperature dependence is different. This may be related to the asymmetry of the density of states, or to additional inelastic processes.
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Dates et versions

hal-00541616 , version 1 (30-11-2010)

Identifiants

  • HAL Id : hal-00541616 , version 1

Citer

O. Couturaud, Benoit Jouault, S. Bonifacie, Christophe Chaubet, D. Mailly. Tunneling and Coulomb Blockade in narrow GaAs/InGaAs/AlGaAs Hall bars in the quantum hall regime. 28th International Conference on the Physics of Semiconductors (ICPS-28), Jul 2006, Vienna (AUSTRIA), France. pp.663-664. ⟨hal-00541616⟩
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