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Communication Dans Un Congrès Année : 2004

Growth of InN layers by MOVPE using different substrates

Sandra Ruffenach
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  • PersonId : 860799
Olivier Briot
Bernard Gil
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A. van Der Lee

Résumé

This study presents the MOVPE growth of InN films onto different substrate materials, including sapphire, nitrided or not, GaN and AlN buffer layers deposited onto sapphire, and Si(111).;For InN growth onto nitrided sapphire, different growth parameters were investigated in order to determine the best growth conditions. We found that a low V/III molar ratio has to be used in order to increase the growth rate. A light nitridation treatment gives the best electrical properties: mirror like layers with a mobility of 800 cm(2)/V s were obtained. At room temperature, reflectivity experiments show the existence of a transition at 1.2 eV, while photoluminescence appears around 0.8 ev.;Using the same growth conditions onto GaN buffers (with thicknesses ranging from 15 to 1000 A), we found that the best mobilities are obtained above a given buffer thickness.;By comparing also with AlN buffer layers and silicon substrates, we found that our previous conclusion still holds; lightly nitrided sapphire substrate leads to the best electrical properties and morphology. (C) 2004 Elsevier Ltd. All rights reserved.
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Dates et versions

hal-00540449 , version 1 (26-11-2010)

Identifiants

  • HAL Id : hal-00540449 , version 1

Citer

B. Maleyre, Sandra Ruffenach, Olivier Briot, Bernard Gil, A. van Der Lee. Growth of InN layers by MOVPE using different substrates. Meeting of the European-Materials-Research-Society, May 2004, Strasbourg (FRANCE), France. pp.517-526. ⟨hal-00540449⟩
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