Lifetime and wearout current modeling of ultra-thin oxide antifuse bitcells using transient characterization
Résumé
The lifetime modeling of antifuse bit cells is studied using transient measurements. Firstly, the wearout current is successfully modeled as Fowler-Nordheim. Secondly, the TDDB power-law voltage acceleration model is validated down to 30 0ns for a stress voltage of 5.5 V. Lifetime results are compared with the Multi-Vibrational Hydrogen Release Model.