Investigation of AlGaN/AlN/GaN heterostructures for magnetic sensor application from liquid helium temperature to 300 degrees C - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Applied Physics Letters Année : 2008

Investigation of AlGaN/AlN/GaN heterostructures for magnetic sensor application from liquid helium temperature to 300 degrees C

Laure Bouguen
  • Fonction : Auteur
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Sylvie Contreras
Benoit Jouault
Leszek Konczewicz
  • Fonction : Auteur
  • PersonId : 861730
Jean Camassel
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Y. Cordier
M. Azize
  • Fonction : Auteur
Sébastien Chenot
  • Fonction : Auteur
N. Baron
  • Fonction : Auteur

Résumé

We report a comparative investigation of the magnetic response of long channel AlGaN/AlN/GaN heterostructures (Hall-field effect transistor devices) grown on three different semi-insulating templates on silicon and sapphire. From Hall effect measurements conducted up to 573 K (300 degrees C), we find that some of these specific devices can be used as magnetic sensors in a large temperature range (similar to 600 degrees C) with a magnetic sensitivity close to 60 V/A T and a small thermal drift. On the best sample, between liquid helium temperature and 300 degrees C, the average value of the thermal drift is only -7 ppm/degrees C. (C) 2008 American Institute of Physics.
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Dates et versions

hal-00535633 , version 1 (12-11-2010)

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Laure Bouguen, Sylvie Contreras, Benoit Jouault, Leszek Konczewicz, Jean Camassel, et al.. Investigation of AlGaN/AlN/GaN heterostructures for magnetic sensor application from liquid helium temperature to 300 degrees C. Applied Physics Letters, 2008, 92, pp.043504. ⟨10.1063/1.2838301⟩. ⟨hal-00535633⟩
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