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Article Dans Une Revue Nature Materials Année : 2010

Precise control of thermal conductivity at the nanoscale through individual phonon-scattering barriers

P. Chen

Résumé

The ability to precisely control the thermal conductivity (κ) of a material is fundamental in the development of on-chip heat management or energy conversion applications. Nanostructuring permits a marked reduction of κ of single-crystalline materials, as recently demonstrated for silicon nanowires. However, silicon-based nanostructured materials with extremely low κ are not limited to nanowires. By engineering a set of individual phonon-scattering nanodot barriers we have accurately tailored the thermal conductivity of a single-crystalline SiGe material in spatially defined regions as short as ∼15 nm. Single-barrier thermal resistances between 2 and 4×10−9 m2 K W−1 were attained, resulting in a room-temperature κ down to about 0.9 W m−1 K−1, in multilayered structures with as little as five barriers. Such low thermal conductivity is compatible with a totally diffuse mismatch model for the barriers, and it is well below the amorphous limit. The results are in agreement with atomistic Green’s function simulations.
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hal-00505811 , version 1 (14-06-2017)

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Paternité - Pas d'utilisation commerciale - Partage selon les Conditions Initiales

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Gilles Pernot, M. Stoffel, I. Savic, F. Pezzoli, P. Chen, et al.. Precise control of thermal conductivity at the nanoscale through individual phonon-scattering barriers. Nature Materials, 2010, 9 (6), pp.491-495. ⟨10.1038/NMAT2752⟩. ⟨hal-00505811⟩
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