Photocurrent study of InAs/GaInAsP(Q1.18) quantum dots - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès CONFERENCE PROCEEDINGS - INDIUM PHOSPHIDE AND RELATED MATERIALS Année : 2008

Photocurrent study of InAs/GaInAsP(Q1.18) quantum dots

Résumé

We present photocurrent measurements of InAs/InGaAsP quantum dots embedded in a PIN diode grown on InP(311)B substrates. From the 300 K spectrum we deduce the ground and first excited states of the dots. Their energies are consistent with photoluminescence spectroscopy. Absorption coefficient was extracted from photocurrent.
Fichier non déposé

Dates et versions

hal-00501639 , version 1 (12-07-2010)

Identifiants

Citer

Soline Richard, Jean-Philippe Burin, Christophe Labbe, Charles Cornet, Hervé Folliot, et al.. Photocurrent study of InAs/GaInAsP(Q1.18) quantum dots. Indium Phosphide and Related Materials (IPRM), May 2008, Versailles, France. pp.309-11, ⟨10.1109/ICIPRM.2008.4702977⟩. ⟨hal-00501639⟩
146 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More