Electronic structure and carrier dynamics in InAs/InP double-cap quantum dots - Archive ouverte HAL
Article Dans Une Revue Applied Physics Letters Année : 2009

Electronic structure and carrier dynamics in InAs/InP double-cap quantum dots

Résumé

The carrier dynamics in InAs double-cap quantum dots DC-QDs grown on InP113B are investigated. The shape of these QDs can be controlled during the growth, yielding an emission wavelength of the system of about 1.55 m at room temperature. The DC-QD dynamics is studied by time-resolved photoluminescence experiments at low temperature for various excitation densities. A simplified dynamic model is developed, yielding results consistent with experimental data. This analysis yields the determination of the Auger coefficients and the intradot relaxation time in this system.
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Dates et versions

hal-00492421 , version 1 (15-06-2010)

Identifiants

  • HAL Id : hal-00492421 , version 1

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Patrice Miska, Jacky Even, Xavier Marie, Olivier Dehaese. Electronic structure and carrier dynamics in InAs/InP double-cap quantum dots. Applied Physics Letters, 2009, pp.061916. ⟨hal-00492421⟩
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