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Communication Dans Un Congrès Année : 2009

First step to Si photonics: synthesis of quantum dot light-emitters on GaP substrate by MBE

Résumé

We have grown InAs and InP quantum dots (QDs) on GaP substrate by Molecular Beam Epitaxy (MBE) and analysed them by Atomic Force Microscopy (AFM) and photoluminescence (PL). AFM images confirm the formation of InAs and InP QDs. Largest InAs QDs density is obtained at a growth temperature of 450 °C and under an AsH3 flux of 0.3SCCM. The evolution of QDs shape and absence of photoluminescence indicate a likely plastic relaxation of the strain between InAs and GaP. Concerning InP/GaP QDs, their lateral size, height and density indicate good quality QDs. Photoluminescence signal has been detected for capped InP/GaP QDs until 180 K. The unchanged peak position with respect to InP coverage is attributed to the nearly constant height of the QDs.

Dates et versions

hal-00491426 , version 1 (11-06-2010)

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Citer

Weiming Guo, Alexandre Bondi, Charles Cornet, Hervé Folliot, Antoine Létoublon, et al.. First step to Si photonics: synthesis of quantum dot light-emitters on GaP substrate by MBE. 9th International Conference Trends in Nanotechnologies (TNT 2008), Sep 2008, Oviedo, Spain. pp.2207, ⟨10.1002/pssc.200881722⟩. ⟨hal-00491426⟩
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