Design and Fabrication of GaInAsP-InP VCSEL with two a-Si/a-SiNx Bragg Reflectors
Résumé
We report on the design and fabrication of a 1.55μm wavelength VCSEL which consists of two dielectric Bragg mirrors and a InGaAsP based active region. The dielectric materials are amorphous silicon (a-Si) and amorphous silicon nitride (a-SiNx). Thanks to the high index difference, a high reflectivity of 99.5% and a very large spectral bandwidth of 800 nm are reached with only four and a half periods of a-Si/a-SiNx. The VCSEL was fabricated by metallic bonding process. A laser effect has been obtained at room temperature (RT) on an optically pumped device.
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