PHOTOCURENT SPECTROSCOPY OF InAs/GaInAsP(Q1.18) QUANTUM DOTS
Résumé
We present photocurrent measurements of InAs/InGaAsP (Q1.18) quantum dots embedded in a PIN diode grown on InP(311)B substrates. From the room temperature spectrum we deduce the fundamental E0 = 0.8eV and first excited E1 = 0.83eV energy levels of the dots. These energy levels are consistent with photoluminescence (PL) spectroscopy measurements E0=0.82eV. They are in good agreement with numerical simulations. Liquid nitrogen temperature measurements give E0=0.84eV and E1=0.895eV in agreement with PL measurements. Electroluminescence study correlates these results. Absorption coefficient was extracted from PC.