Optical properties and morphology of InAs/InP (113B) surface quantum dots
Résumé
We report on long-wavelength photoluminescence (PL) emission at room temperature from self-organized InAs urface quantum dots (SQDs) grown by Gas Source Molecular Beam Epitaxy (GSMBE) on a GaInAsP / InP (113)B substrate. The influence of arsenic pressure conditions during growth on the PL emission of surface quantum dots is detailed as well as oxide/contamination layer formation after growth. Experimental results are in good agreement with six-band k*p theory in the envelope function approximation.