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Article Dans Une Revue Applied Physics Letters Année : 2008

Optical properties and morphology of InAs/InP (113B) surface quantum dots

Résumé

We report on long-wavelength photoluminescence (PL) emission at room temperature from self-organized InAs urface quantum dots (SQDs) grown by Gas Source Molecular Beam Epitaxy (GSMBE) on a GaInAsP / InP (113)B substrate. The influence of arsenic pressure conditions during growth on the PL emission of surface quantum dots is detailed as well as oxide/contamination layer formation after growth. Experimental results are in good agreement with six-band k*p theory in the envelope function approximation.

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Dates et versions

hal-00486830 , version 1 (26-05-2010)

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Abdulhadi Nakkar, Hervé Folliot, Alain Le Corre, Philippe Caroff, François Doré, et al.. Optical properties and morphology of InAs/InP (113B) surface quantum dots. Applied Physics Letters, 2008, 92 (23), pp.231911. ⟨10.1063/1.2943651⟩. ⟨hal-00486830⟩
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