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Communication Dans Un Congrès Année : 2010

Characterization Methodology of a Millimeter-Wave 65nm CMOS PA Dedicated to 60GHz WPAN Standard

Résumé

A millimeter-wave PA (Power Amplifier) based on a 65nm CMOS technology from STMicroelectronics has been designed. It is optimized to deliver the maximum OCP1 (Output Compression Point) equal to 12dBm. The targeted feature is the unlicensed band around 60GHz suitable for Wireless Personal Area Network application (WPAN). Considering that constraints, one-tone simulations are not sufficient to characterize the linearity performances of the PA in its real conditions of use. Consequently, the high frequency memory effect is firstly highlighted by performing two-tone simulations. Linearity figures of merit are discussed applying an OFDM (Orthogonal Frequency Devising Multiplexing) modulated signal. The PA offers an ACPR of 35dB, an EVM of 20\%and compresses at 9dBm.

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Dates et versions

hal-00480617 , version 1 (04-05-2010)

Identifiants

  • HAL Id : hal-00480617 , version 1

Citer

Sofiane Aloui, Nicolas Delaunay, Eric Kerherve, Nathalie Deltimple, Robert Plana, et al.. Characterization Methodology of a Millimeter-Wave 65nm CMOS PA Dedicated to 60GHz WPAN Standard. IEEE Latin American Symposium on Circuits and Systems (LASCAS), Feb 2010, Brazil. pp.200-204. ⟨hal-00480617⟩
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