Characterization Methodology of a Millimeter-Wave 65nm CMOS PA Dedicated to 60GHz WPAN Standard - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2010

Characterization Methodology of a Millimeter-Wave 65nm CMOS PA Dedicated to 60GHz WPAN Standard

Résumé

A millimeter-wave Power Amplifier PA based on a 65nm CMOS technology from STMicroelectronics has been designed. The PA is considered here as a model depicted by a black box. The targeted feature is the unlicensed band around 60GHz suitable for Wireless Personal Area Network application (WPAN). Considering that constraints, one-tone simulations are not sufficient to characterize the linearity performances of the PA in its real conditions of use. Consequently, the high frequency memory effect is firstly highlighted by performing two-tone simulations. Linearity figures of merit are discussed applying an OFDM (Orthogonal Frequency Devising Multiplexing) modulated signal. To characterize that, co-simulations in PTOLEMY environment are performed.
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Dates et versions

hal-00480609 , version 1 (04-05-2010)

Identifiants

  • HAL Id : hal-00480609 , version 1

Citer

Sofiane Aloui, Eric Kerherve, Robert Plana, Didier Belot. Characterization Methodology of a Millimeter-Wave 65nm CMOS PA Dedicated to 60GHz WPAN Standard. École d'hiver Francophone sur les Technologies de Conception des Systèmes embarqués Hétérogènes, Jan 2010, France. pp.15-16. ⟨hal-00480609⟩
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