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Article Dans Une Revue Solid State Communications Année : 2002

Direct synthesis of -SiC and h-BN coated -SiC nanowires

K. Saulig-Wenger
  • Fonction : Auteur
D. Cornu
F. Chassagneux
  • Fonction : Auteur
G. Ferro
  • Fonction : Auteur
P. Miele

Résumé

-Silicon carbide (-SiC) nanowires (NWs) have been grown by thermal treatment of commercial silicon particles disposed in a graphite crucible under nitrogen atmosphere. By the same way, treatment under argon of a mixture of a boron nitride (BN) based powder and silicon particles led to h-BN coated -SiC nanowires. The structures of both nanoobjects have been investigated by HRTEM, EDX and EELS

Domaines

Matériaux
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Dates et versions

hal-00475493 , version 1 (22-04-2010)

Identifiants

  • HAL Id : hal-00475493 , version 1

Citer

K. Saulig-Wenger, D. Cornu, F. Chassagneux, G. Ferro, Thierry Epicier, et al.. Direct synthesis of -SiC and h-BN coated -SiC nanowires. Solid State Communications, 2002, pp.157-161. ⟨hal-00475493⟩
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