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Communication Dans Un Congrès Année : 2009

V-Band Amplifier MMICs Using Multi-Finger InP/GaAsSb DHBT Technology

Résumé

We report on the development of a multi-finger InP/GaAsSb DHBT technology, optimized for the fabrication of RF MMICs. Geometry (number of fingers) and structure optimization has allowed to get FT~200 GHz and FMAX>300 GHz, to suit microwave applications. Special attention has been paid to critical thermal behavior. Key devices have been modeled using a modified Gummel-Poon model. Based on these models, and a passive devices library, RF amplifiers have been designed to operate at 60 GHz, fabricated using the developed process, using 2-finger devices, and measured. 1-stage amplifier delivers 5.5 dB, and 2-device 2-stage amplifier achieves up to 10 dB gain.
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Dates et versions

hal-00474497 , version 1 (20-04-2010)

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Citer

J. Godin, V. Nodjiadjim, M. Riet, P. Berdaguer, S. Piotrowicz, et al.. V-Band Amplifier MMICs Using Multi-Finger InP/GaAsSb DHBT Technology. 31st IEEE Compound Semiconductor Integrated Circuit Symposium, CSISC 2009, Oct 2009, Greensboro - Caroline du Nord, United States. pp.1-4, ⟨10.1109/csics.2009.5315658⟩. ⟨hal-00474497⟩
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