Investigaton on fabrication of GaAsSb/InP UTC-PD based photomixer operating at 1.55 µm wavelengths - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2009

Investigaton on fabrication of GaAsSb/InP UTC-PD based photomixer operating at 1.55 µm wavelengths

Résumé

We report our investigation on realization of 1.55 mum wavelengths sensitive photomixer based on GaAsSb/InP uni-travelling-carrier photodiode. The epitaxial structure and technological steps are described.
Fichier non déposé

Dates et versions

hal-00474427 , version 1 (20-04-2010)

Identifiants

Citer

Alexandre Beck, Olivier Offranc, Mohammed Zaknoune, Emilien Peytavit, Guillaume Ducournau, et al.. Investigaton on fabrication of GaAsSb/InP UTC-PD based photomixer operating at 1.55 µm wavelengths. 34th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2009, Sep 2009, Busan, South Korea. pp.1-2, ⟨10.1109/ICIMW.2009.5324658⟩. ⟨hal-00474427⟩
16 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More