Selective area growth of GaN-based structures by molecular beam epitaxy on micrometer and nanometer size patterns - Archive ouverte HAL Access content directly
Journal Articles Materials Science in Semiconductor Processing Year : 2009

Selective area growth of GaN-based structures by molecular beam epitaxy on micrometer and nanometer size patterns

Abstract

In this work, we describe the main features of selective area growth (SAG) of GaN by molecular beam epitaxy (MBE) using ammonia. Different schemes such as growth into micrometer and nanometer size windows in Si3N4 dielectric masks and mesa structures etched on GaN or Silicon substrate are studied.

Dates and versions

hal-00473644 , version 1 (16-04-2010)

Identifiers

Cite

Yvon Cordier, Fabrice Semond, Jean-Christophe Moreno, Éric Frayssinet, Brahim Benbakhti, et al.. Selective area growth of GaN-based structures by molecular beam epitaxy on micrometer and nanometer size patterns. Materials Science in Semiconductor Processing, 2009, 12, pp.16-20. ⟨10.1016/j.mssp.2009.07.003⟩. ⟨hal-00473644⟩
26 View
0 Download

Altmetric

Share

Gmail Mastodon Facebook X LinkedIn More