Selective area growth of GaN-based structures by molecular beam epitaxy on micrometer and nanometer size patterns
Abstract
In this work, we describe the main features of selective area growth (SAG) of GaN by molecular beam epitaxy (MBE) using ammonia. Different schemes such as growth into micrometer and nanometer size windows in Si3N4 dielectric masks and mesa structures etched on GaN or Silicon substrate are studied.