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Article Dans Une Revue Materials Science in Semiconductor Processing Année : 2009

Selective area growth of GaN-based structures by molecular beam epitaxy on micrometer and nanometer size patterns

Résumé

In this work, we describe the main features of selective area growth (SAG) of GaN by molecular beam epitaxy (MBE) using ammonia. Different schemes such as growth into micrometer and nanometer size windows in Si3N4 dielectric masks and mesa structures etched on GaN or Silicon substrate are studied.

Dates et versions

hal-00473644 , version 1 (16-04-2010)

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Yvon Cordier, Fabrice Semond, Jean-Christophe Moreno, Éric Frayssinet, Brahim Benbakhti, et al.. Selective area growth of GaN-based structures by molecular beam epitaxy on micrometer and nanometer size patterns. Materials Science in Semiconductor Processing, 2009, 12, pp.16-20. ⟨10.1016/j.mssp.2009.07.003⟩. ⟨hal-00473644⟩
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