High thermally induced index variations with short response time in InP/GaInAsP/InP waveguide Schottky diodes
Résumé
Thermally induced index variations as high as 0.1 were recorded in InP/GaAsInP1.15/InP waveguide Schottky diodes for 1W/mm electrical power per electrode length. Pulse response characterisation showed almost 700ns response time for 1s square pulses under forward biased conditions (I=20mA, V=300mV).