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Article Dans Une Revue Electronics Letters Année : 2009

High thermally induced index variations with short response time in InP/GaInAsP/InP waveguide Schottky diodes

Résumé

Thermally induced index variations as high as 0.1 were recorded in InP/GaAsInP1.15/InP waveguide Schottky diodes for 1W/mm electrical power per electrode length. Pulse response characterisation showed almost 700ns response time for 1s square pulses under forward biased conditions (I=20mA, V=300mV).
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hal-00473047 , version 1 (14-04-2010)

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N. Saadsaoud, Malek Zegaoui, Didier Decoster, El Hadj Dogheche, X. Wallart, et al.. High thermally induced index variations with short response time in InP/GaInAsP/InP waveguide Schottky diodes. Electronics Letters, 2009, 45 (15), pp.802-803. ⟨10.1049/el.2009.0696⟩. ⟨hal-00473047⟩
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