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Article Dans Une Revue IEEE Photonics Technology Letters Année : 2009

A new low crosstalk InP digital optical switch based on carrier-induced effects for 1.55-µm applications

Résumé

This letter demonstrates an original carrier-induced effects InP digital optical switch (DOS) designed to achieve a low optical crosstalk for 1.55-μm wavelength applications. It is based on a widened multimode Y-junction combined with a sinusoidal shape waveguide to increase the optical contrast ratio between the two output branches. The entire InP-InGaAsP-InP DOS was designed using a semi-vectorial three-dimensional beam propagation method. The fabricated InP DOS with λg = 1.3 μm heterostructure exhibits an optical crosstalk as low as -38.5 dB for a 33-mA switching current at 1.55-μm wavelength for a favourable polarized input light.
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hal-00472777 , version 1 (13-04-2010)

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Malek Zegaoui, Didier Decoster, Joseph Harari, V. Magnin, X. Wallart, et al.. A new low crosstalk InP digital optical switch based on carrier-induced effects for 1.55-µm applications. IEEE Photonics Technology Letters, 2009, 21 (8), pp.546-548. ⟨10.1109/LPT.2009.2014646⟩. ⟨hal-00472777⟩
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