Journal Articles
Applied Physics Letters
Year : 2009
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https://hal.science/hal-00472768
Submitted on : Tuesday, April 13, 2010-11:10:01 AM
Last modification on : Friday, March 24, 2023-2:52:53 PM
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K. Nishiguchi, N. Clement, T. Yamaguchi, A. Fujiwara. Si nanowire ion-sensitive field-effect transistors with a shared floating gate. Applied Physics Letters, 2009, 94, pp.163106-1-3. ⟨10.1063/1.3123002⟩. ⟨hal-00472768⟩
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