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Journal Articles Applied Physics Letters Year : 2009

Si nanowire ion-sensitive field-effect transistors with a shared floating gate

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hal-00472768 , version 1 (13-04-2010)

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K. Nishiguchi, N. Clement, T. Yamaguchi, A. Fujiwara. Si nanowire ion-sensitive field-effect transistors with a shared floating gate. Applied Physics Letters, 2009, 94, pp.163106-1-3. ⟨10.1063/1.3123002⟩. ⟨hal-00472768⟩
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