UHV fabrication of the ytterbium silicide as potential low schottky barrier S/D contact material for N-type MOSFET

Dmitri Yarekha; G. Larrieu; N. Breil; Emmanuel Dubois; S. Godey; X. Wallart; Caroline Soyer; Denis Remiens; N. Reckinger; Xing Tang; A. Laszcz; J. Ratajczak; A. Halimaoui

doi:10.1149/1.3118961

Journal Articles ECS Transactions Year : 2009

UHV fabrication of the ytterbium silicide as potential low schottky barrier S/D contact material for N-type MOSFET

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Dmitri Yarekha

Function : Author
PersonId : 746988
IdHAL : dmitri-yarekha
IdRef : 068447507

Microélectronique Silicium - IEMN

G. Larrieu

Function : Author
PersonId : 14226
IdHAL : glarrieu
ORCID : 0000-0001-5157-2277
IdRef : 079105432

Microélectronique Silicium - IEMN

N. Breil

Function : Author

Microélectronique Silicium - IEMN

Emmanuel Dubois

Function : Author
PersonId : 738944
IdHAL : emmanuel-dubois-iemn
ORCID : 0000-0002-0347-010X
IdRef : 134290291

Microélectronique Silicium - IEMN

CV

S. Godey

Function : Author
PersonId : 746144
IdHAL : sylvie-godey
ORCID : 0000-0003-2406-3519
IdRef : 224710451

Plateforme de Caractérisation Multi-Physiques - IEMN

X. Wallart

Function : Author
PersonId : 741251
IdHAL : xavier-wallart
ORCID : 0000-0002-0915-0043
IdRef : 03424879X

EPItaxie et PHYsique des hétérostructures - IEMN

Caroline Soyer

Function : Author
PersonId : 748061
IdHAL : caroline-soyer

Matériaux et Acoustiques pour MIcro et NAno systèmes intégrés - IEMN

Denis Remiens

Function : Author

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520

Matériaux et Acoustiques pour MIcro et NAno systèmes intégrés - IEMN

N. Reckinger

Function : Author

Université Catholique de Louvain = Catholic University of Louvain

Xing Tang

Function : Author

Université Catholique de Louvain = Catholic University of Louvain

A. Laszcz

Function : Author

Institute of Electron Technology, A1. Lotnikow 32/46, 02-668 Warsaw, Poland

J. Ratajczak

Function : Author

Institute of Electron Technology, A1. Lotnikow 32/46, 02-668 Warsaw, Poland

A. Halimaoui

Function : Author

STMicroelectronics [Crolles]

Domains

Engineering Sciences [physics]

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2009-Yarekha-ECS-Trans-UHV-Fab-Yb-silicide-hal.pdf (373.81 Ko)

Origin	Files produced by the author(s)

Emmanuel Dubois : Connect in order to contact the contributor

https://hal.science/hal-00471999

Submitted on : Thursday, September 26, 2024-9:44:46 AM

Last modification on : Tuesday, October 1, 2024-3:23:40 AM

Dates and versions

hal-00471999 , version 1 (26-09-2024)

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HAL Id : hal-00471999 , version 1
DOI : 10.1149/1.3118961

Cite

Dmitri Yarekha, G. Larrieu, N. Breil, Emmanuel Dubois, S. Godey, et al.. UHV fabrication of the ytterbium silicide as potential low schottky barrier S/D contact material for N-type MOSFET. ECS Transactions, 2009, 19, pp.339-344. ⟨10.1149/1.3118961⟩. ⟨hal-00471999⟩

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UHV fabrication of the ytterbium silicide as potential low schottky barrier S/D contact material for N-type MOSFET

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