Schottky barrier lowering with the formation of crystalline Er silicide on n-Si upon thermal annealing
Résumé
The evolution of the Schottky barrier height (SBH) of Er silicide contacts to n-Si is investigated as a function of the annealing temperature. The SBH is found to decrease substantially from 0.43 eV for as-deposited samples to reach its lowest value, 0.28 eV, at 450°C. By x-ray diffraction, high resolution transmission electron microscopy and x-ray photoelectron spectroscopy, the decrease of the SBH is shown to be associated to the progressive formation of crystalline ErSi2-x
| Origine | Fichiers produits par l'(les) auteur(s) |
|---|