Thermal stability of TaN-based thin layers for Cu metallization
Résumé
The diffusion of Cu through TaN‐based thin layers into a Si substrate has been studied. The barrier efficiency of TaN/Ta/TaN multilayer barrier of 50 nm:50 nm:50 nm in thickness has been investigated and is compared with that of TaN single layers. Thermal stabilities of these TaN‐based thin layers were determined from glancing incidence angle X‐ray diffraction and transmission electron microscopy, conducted in the temperature range of 773–973 K. The TaN/Ta/TaN barrier appeared to be more efficient than the TaN single layer in preventing Cu diffusion.
Domaines
Matériaux
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Nazon-Berger-Sarradin Plasma process. pol. 2009 s844-s848.pdf (392.14 Ko)
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