SiOxFy film growth in SiF4/O2 plasma at cryogenic temperature - Archive ouverte HAL Access content directly
Conference Papers Year : 2007
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hal-00444241 , version 1 (06-01-2010)

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  • HAL Id : hal-00444241 , version 1

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Laurianne E. Pichon, Corinne Y. Duluard, Thomas Tillocher, Remi Dussart, Philippe Lefaucheux, et al.. SiOxFy film growth in SiF4/O2 plasma at cryogenic temperature. 18th International Symposium on Plasma Chemistry, Aug 2007, Kyoto, Japan. pp.30P-105. ⟨hal-00444241⟩
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