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Article Dans Une Revue Physical Review B: Condensed Matter and Materials Physics (1998-2015) Année : 2009

Spin filtering through a single impurity in a GaAs/AlAs/GaAs resonant tunneling device

Résumé

The Zeeman splittings of a Si shallow donor in AlAs and of a two-dimensional electron gas (2DEG) in GaAs are evidenced by resonant tunneling spectroscopy in submicrometer GaAs/AlAs/GaAs junctions. In magnetic field, the donor acts as a spin-sensitive probe of the spin-polarized density of states in the emitter. In the current-voltage characteristic the two splittings are resolved, which allows us to estimate the Landé g factors for the impurity gI=+1.96±0.16 and for the 2DEG. Because of spin conservation in the tunneling between the 2DEG and the donor, the relative sign of the two g factors can be determined.
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Dates et versions

hal-00439962 , version 1 (09-12-2009)

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Benoit Jouault, Marta Gryglas, M. Baj, Antonella Cavanna, Ulf Gennser, et al.. Spin filtering through a single impurity in a GaAs/AlAs/GaAs resonant tunneling device. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2009, 79, pp.041307(R). ⟨10.1103/PhysRevB.79.041307⟩. ⟨hal-00439962⟩
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