High Curie temperature for La0.7Sr0.3MnO3 thin films deposited on CeO2/YSZ-based buffered silicon substrates
Résumé
Two kinds of epitaxial structures were grown by standard pulsed laser deposition on (001) Si, namely La0.7Sr0.3MnO3/Bi4Ti3O12/CeO2/YSZ/Si (BTO-based), and La0.7Sr0.3MnO3/SrTiO3/ CeO2 /YSZ/Si (STO-based) multilayers. The samples were investigated by means of x-ray diffraction, transmission electron microscopy, magnetic and transport measurements. The Curie temperature TC of the BTO-based samples was found to be higher (360 K) than for the typical reference epitaxial LSMO film grown on (001) SrTiO3 single crystal (345 K), due to high compressive in-plane strain. The STO-based samples show high structural quality, low roughness and high TC (350 K), making them interesting candidates for use in innovative LSMO-based bolometers or spintronic devices operating at room temperature. (Some figures in this article are in colour only in the electronic version)
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