Comparative study of Cu(In,Ga)Se-2/(PVD)In2S3 and Cu(In,Ga)Se-2/(CBD)CdS heterojunction based solar cells by admittance spectroscopy, current-voltage and spectral response measurements - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Thin Solid Films Année : 2009

Comparative study of Cu(In,Ga)Se-2/(PVD)In2S3 and Cu(In,Ga)Se-2/(CBD)CdS heterojunction based solar cells by admittance spectroscopy, current-voltage and spectral response measurements

A. Darga
  • Fonction : Auteur
D. Mencaraglia
Z. Djebbour
  • Fonction : Auteur
A.M. Dubois
  • Fonction : Auteur
R. Chouffot
  • Fonction : Auteur
J. Serhan
  • Fonction : Auteur

Résumé

Co-evaporated Cu(In,Ga)Se-2 (CIGSe) based solar cells with Physical Vapour Deposited (PVD) Indium Sulphide (In2S3) as buffer layer have been studied by admittance spectroscopy and current-voltage characteristics measurements. The results have been compared to those obtained with a reference CBD-CdS/CIGSe device. In darkness, the OVD-In2S3 buffer layer devices exhibit higher densities of trapping defects and low values of shunt resistance. However, under illumination we have observed an important improvement of the In2S3/CIGSe electronic transport properties. This behavior seems to be linked to the presence of a metastable defect with activation energy of 0.3 eV.

Dates et versions

hal-00432079 , version 1 (13-11-2009)

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Citer

A. Darga, D. Mencaraglia, Z. Djebbour, A.M. Dubois, R. Chouffot, et al.. Comparative study of Cu(In,Ga)Se-2/(PVD)In2S3 and Cu(In,Ga)Se-2/(CBD)CdS heterojunction based solar cells by admittance spectroscopy, current-voltage and spectral response measurements. Thin Solid Films, 2009, 517 (7), pp.2423. ⟨10.1016/j.tsf.2008.11.017⟩. ⟨hal-00432079⟩
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